We have measured the long-range order of the alpha phase of Sn on the Ge(111) surface throughout the (3 x 3) --> (root3 x root3)R30 degrees phase transition. The transition has been found of the order-disorder type with a critical temperature T-c similar to 220 K. The expected three-state Potts critical exponents are shown to be consistent with the observed power-law dependence of the (3 x 3) order parameter and its correlation length close to T-c, thus excluding a charge-density wave driven phase transition
At a coverage of 5/3 monolayer (ML), Pb adsorbed on Ge(001) forms a ground phase displaying a ((2 1)...
http://library.naist.jp/mylimedio/dllimedio/show.cgi?bookid=100028354&oldid=3004
The Ge(1 1 1)3d threshold has been studied near the 1050 K surface order-disorder transition by usin...
The \u3b1 phase of Sn/Ge(111) has been investigated from 120 K up to 500 K, using synchrotron radiat...
Équipe 102 : Surfaces et SpectroscopiesInternational audienceWe take advantage of complementary high...
A critical review of our understanding of the reversible phase transition√ 3 × √3 ↔ 3 × 3 for the α-...
Angle-resolved photoemission has been utilized to study the surface electronic structure of 1/3 mono...
The low-temperature phase of Sn/Ge(1 1 1) 3 × 3 is studied by means of first-principle calculations ...
Medium-energy ion scattering is used to study the order-disorder transitions occurring at the Ge(111...
The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees pha...
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K...
The order-disorder phase transition of the Ge(001) surface can be described by taking into account o...
Accurate atomic coordinates of the room-temperature ( √3×√3) R30° and low-temperature ( 3×3) phases ...
Distortions of the root3 x root3- Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a dispropo...
X-ray standing-wave (111) and (111¯) measurements have been performed on the room-temperature and hi...
At a coverage of 5/3 monolayer (ML), Pb adsorbed on Ge(001) forms a ground phase displaying a ((2 1)...
http://library.naist.jp/mylimedio/dllimedio/show.cgi?bookid=100028354&oldid=3004
The Ge(1 1 1)3d threshold has been studied near the 1050 K surface order-disorder transition by usin...
The \u3b1 phase of Sn/Ge(111) has been investigated from 120 K up to 500 K, using synchrotron radiat...
Équipe 102 : Surfaces et SpectroscopiesInternational audienceWe take advantage of complementary high...
A critical review of our understanding of the reversible phase transition√ 3 × √3 ↔ 3 × 3 for the α-...
Angle-resolved photoemission has been utilized to study the surface electronic structure of 1/3 mono...
The low-temperature phase of Sn/Ge(1 1 1) 3 × 3 is studied by means of first-principle calculations ...
Medium-energy ion scattering is used to study the order-disorder transitions occurring at the Ge(111...
The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees pha...
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K...
The order-disorder phase transition of the Ge(001) surface can be described by taking into account o...
Accurate atomic coordinates of the room-temperature ( √3×√3) R30° and low-temperature ( 3×3) phases ...
Distortions of the root3 x root3- Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a dispropo...
X-ray standing-wave (111) and (111¯) measurements have been performed on the room-temperature and hi...
At a coverage of 5/3 monolayer (ML), Pb adsorbed on Ge(001) forms a ground phase displaying a ((2 1)...
http://library.naist.jp/mylimedio/dllimedio/show.cgi?bookid=100028354&oldid=3004
The Ge(1 1 1)3d threshold has been studied near the 1050 K surface order-disorder transition by usin...