In this work we investigated the effect of Fe doping on structural properties of ZrO2 grown by atomic layer deposition (ALD) using Zr(TMHD)4 for Zr and Fe(TMHD)3 for Fe precursors (TMHD=2,2,6,6-tetramethyl-3,5-heptanedionate) and ozone as oxygen source. The temperature during the growth process was fixed at 350 °C. The ALD process was tuned to obtain Fe-doped ZrO2 films with uniform chemical composition, as seen by the time of flight secondary ion mass spectrometry. The control of Fe content was effectively reached, by controlling the ALD precursor pulse ratio, as checked by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry. From XPS, Fe was found in Fe3+ chemical state, which maximizes the magnetization per atom. We als...
In this paper, we study the effect of iron doping in zirconia using both theoretical and experimenta...
Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirco...
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric...
Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 deg...
We systematically investigated, both theoretically and experimentally, Zr1-xFexO2-y ranging from dil...
Abstracts High-k metal oxide films are vital for the future development of microelectronics technolo...
In this study we explore, both from theoretical and experimental side, the effect of Fe doping in Zr...
The growth and thermal stability of an iron oxide overlayer on yttria-stabilized zirconia (YSZ) have...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embe...
[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for...
Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic ...
ABSTRACT: Zirconium oxide (ZrO2) thin film was deposited on nitrogen-doped carbon nanotubes (NCNTs) ...
In this paper, we study the effect of iron doping in zirconia using both theoretical and experimenta...
Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirco...
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric...
Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 deg...
We systematically investigated, both theoretically and experimentally, Zr1-xFexO2-y ranging from dil...
Abstracts High-k metal oxide films are vital for the future development of microelectronics technolo...
In this study we explore, both from theoretical and experimental side, the effect of Fe doping in Zr...
The growth and thermal stability of an iron oxide overlayer on yttria-stabilized zirconia (YSZ) have...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embe...
[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for...
Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic ...
ABSTRACT: Zirconium oxide (ZrO2) thin film was deposited on nitrogen-doped carbon nanotubes (NCNTs) ...
In this paper, we study the effect of iron doping in zirconia using both theoretical and experimenta...
Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirco...
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric...