Properties and thermal stability of the SiO2/GaAs interface with different surface treatments

High quality SiO2 films were deposited by plasma\u2010enhanced chemical vapor deposition on GaAs wafers which received different surface treatments. It was found that metal\u2010oxide\u2010semiconductor (MOS) capacitors which received surface nitridation were unstable under high\u2010temperature anneal (600\u2009\ub0C). These instabilities are interpreted in terms of free As precipitates at the interface. When, instead, a thin Si layer was deposited on the GaAs surface, stable interfaces were obtained at 600\u2009\ub0C. These MOS capacitors appear to show both deep depletion and inversion