Spectroscopic silicon imaging detectors: Past achievements and new developments
- Lutz G.
- Andritschke R.
- Andricek L.
- Eckhardt R.
- Englhauser J.
- Fuchs G.
- Halker O.
- Hartmann R.
- Heinzinger K.
- Hermann S.
- Holl P.
- Kimmel N.
- Lechner P.
- Meidinger N.
- Porro M.
- Richter R. H.
- Schaller G.
- Schnecke M.
- Schopper F.
- Soltau H.
- Struder L.
- Treis J.
- Weichert U.
- Wolfl S.
DOIAbstract
The need of high quality spectroscopic semiconductor imaging detectors in X-ray astronomy was the principal driving force in founding the MPI Semiconductor Laboratory. Detectors developed in this laboratory are based on new function principles and are processed in the silicon detector processing line established within the laboratory. We describe the development of pnCCDs as already used in the XMM-Newton European X-ray observatory and foreseen for eROSITA, the DEPFET based pixel detector for XEUS and a new development which makes it possible to measure charge with a precision below one elementary charge. A noise value of 0.25 electron r.m.s. has already been reached. © 2007
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