Add to ORKGIn this contribution we investigate in time domain pre-breakdown current fluctuations during the device degradation between Vcrit (≈ -50V for -2V/2min step-stress) and the breakdown voltage (Vbd≈ 80V), as well as post-stress random telegraph signal (RTS) noise in Al0.24Ga0.76N(25nm)/GaN(40nm UID + 3μm C-doped)/SiC HEMTs from FBH
The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the fi...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term r...
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive ga...
Random telegraph noise (RTN) and pre-breakdown bursts in gate current are studied in time domain in ...
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward...
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the curr...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
In this paper we present the results of an experiment carried out on HEMT test structures, which wer...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based hig...
International audienceThis paper describes the high temperature reverse bias (HTRB) stress effects o...
GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of e...
peer reviewedPerformance of unpassivated MOVPE grown AlGaN/GaN/SiC HEMTs under short-term electrical...
The degradation mechanisms induced in GaN-based HEMTs when reverse gate-bias stress are applied have...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the fi...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term r...
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive ga...
Random telegraph noise (RTN) and pre-breakdown bursts in gate current are studied in time domain in ...
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward...
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the curr...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
In this paper we present the results of an experiment carried out on HEMT test structures, which wer...
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and cu...
This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based hig...
International audienceThis paper describes the high temperature reverse bias (HTRB) stress effects o...
GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of e...
peer reviewedPerformance of unpassivated MOVPE grown AlGaN/GaN/SiC HEMTs under short-term electrical...
The degradation mechanisms induced in GaN-based HEMTs when reverse gate-bias stress are applied have...
This paper analyzes the reverse-bias degradation of GaN-based HEMTs. Experimental evidence collected...
The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the fi...
The degradation of packaged GaN HEMTs for high power applications has been studied under long term r...
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive ga...