Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

This paper reports on an extensive analysis of the degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to on-state and off-state stresses. The results of this study indicate that: (i) the analyzed devices do not show any degradation when submitted to off-state stress tests up to 100 V; (ii) during on-state stress, devices show a significant decrease in drain current and in the electroluminescence (EL) signal; (iii) degradation rate is strongly dependent on the intensity of the EL signal measured during stress on the devices, which is related to the concentration of hot electrons in the channel. Based on the experimental evidence collected within this paper, the on-state degradation of HEMTs is ascribed to the trapping of negative charge in the gate-drain access region, triggered by hot electrons. By considering the intensity of the EL signal as a measure of the stress acceleration factor, we have derived an acceleration law for the hot-electron induced degradation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723848