Add to ORKGThis paper reviews results of a study concerning the effects of hot electrons on the degradation of GaAs MESFETs and HEMTs. Gate current measurements are adopted as a tool to characterize hot electron effects. Degradation consists of a decrease of drain current and is correlated to the gate current to drain current ratio
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
This work for the first time describes the results of hot electron stress experiments performed on I...
We present device simulation results showing that only a simultaneous, localised increase of the int...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
This paper describes experimental results which demonstrate the existence of reliability problems du...
The renovated interest in the study of hot carrier phenomena in III-V FET devices originates from tw...
This paper reports on the permanent degradation of the electrical characteristics of GaAs-based HEMT...
The renovated interest in the study of hot carrier phenomena in III-V FET devices originates from tw...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
Hot electron reliability experiments were conducted on four GaAs FET processes. Observed device degr...
We report on the hot-electrons induced degradation in AIGaAs/GaAs high electron mobility transistors...
Thanks to the improvements in material quality, gate processing and device design, the robustness of...
This paper reports on hot electron (HE) degradation of 0.25-\u3bcm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs...
The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a...
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
This work for the first time describes the results of hot electron stress experiments performed on I...
We present device simulation results showing that only a simultaneous, localised increase of the int...
We present the first data on rapid degradation of electrical characteristics induced by hot electron...
This paper describes experimental results which demonstrate the existence of reliability problems du...
The renovated interest in the study of hot carrier phenomena in III-V FET devices originates from tw...
This paper reports on the permanent degradation of the electrical characteristics of GaAs-based HEMT...
The renovated interest in the study of hot carrier phenomena in III-V FET devices originates from tw...
We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drai...
We present in this work the rapid and irreversible degradation of electrical characteristics induced...
Hot electron reliability experiments were conducted on four GaAs FET processes. Observed device degr...
We report on the hot-electrons induced degradation in AIGaAs/GaAs high electron mobility transistors...
Thanks to the improvements in material quality, gate processing and device design, the robustness of...
This paper reports on hot electron (HE) degradation of 0.25-\u3bcm Al0.25Ga0.75As/In0.2Ga0.8 As/GaAs...
The technology of III-V FETs is nowadays mature, and traditional wear-out mechanisms are no longer a...
This work presents a numerical study of high-field degradation and reliability issues of AlGaAs/GaAs...
This work for the first time describes the results of hot electron stress experiments performed on I...
We present device simulation results showing that only a simultaneous, localised increase of the int...