Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very high current densities and operating junction temperatures which may lead to circuit failure due to electromigration and interdiffusion effects. Electromigration leads both to the formation of open circuits in the Al-Cu metallizations, and to degradation of ohmic contacts due to accumulation of transported metal material
150 p.Electromigration has been a very active research topic ever since it was first discovered to b...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar te...
This paper summarizes results of accelerated testing on Emitter Coupled Logic bipolar integrated ci...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Fast thermal nterconnects used in power ICs are susceptible to short circuit failure due to a combin...
High current density induced damages such as electromigration in the on-chip interconnection /metall...
Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The ...
Metal migration by driving force of electron-flow and temperature gradient is a major reliability co...
Cu/low-k interconnects have replaced many A1 interconnects recently in Integrated Circuits with 0.13...
Electromigration is one of the main reliability concerns in integrated circuit (IC) technologies hav...
Electromigration is the displacement of ions in a metal resulting from the momentum transfer between...
Spurious faults were observed on the miniature silver fuses of electronic cards used for the cryogen...
Because of the continuing miniaturization, electromigration (EM) phenomena are still a key issue in ...
150 p.Electromigration has been a very active research topic ever since it was first discovered to b...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar te...
This paper summarizes results of accelerated testing on Emitter Coupled Logic bipolar integrated ci...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Fast thermal nterconnects used in power ICs are susceptible to short circuit failure due to a combin...
High current density induced damages such as electromigration in the on-chip interconnection /metall...
Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The ...
Metal migration by driving force of electron-flow and temperature gradient is a major reliability co...
Cu/low-k interconnects have replaced many A1 interconnects recently in Integrated Circuits with 0.13...
Electromigration is one of the main reliability concerns in integrated circuit (IC) technologies hav...
Electromigration is the displacement of ions in a metal resulting from the momentum transfer between...
Spurious faults were observed on the miniature silver fuses of electronic cards used for the cryogen...
Because of the continuing miniaturization, electromigration (EM) phenomena are still a key issue in ...
150 p.Electromigration has been a very active research topic ever since it was first discovered to b...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...