Add to ORKGThe study describes the consequences of interdiffusione effects, compound formation and Schottky barrier height changes in the multilayer metallization used for Schottky contacts on Si. Moreover, it correlates these failure mechanisms with degradation of performances of Transistor Transistor Logic (TTL) integrated circuit
Commercial power MESFETs with Ti/W/Au gate metallization show a failure mode consisting of a decreas...
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
The presentation addresses the reliability of Au ball bonds of fifferent Au wire qualities on Al chi...
Failure modes of bipolar Schottky logic devices due to metallurgical degradation of PtSi/Ti-W/Al con...
Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated ...
Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500\u201...
An analysis of the possible failure modes of TTL-LS was carried out, with particular emphasis on lon...
Scanning electron microscopy, microphobe measurements, Auger electron spectroscopy and X-ray diffrac...
The stability of metal layers on semiconductors is a key issue for the device electrical performance...
Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very hig...
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar te...
Planar vertical interconnects and low resistivity track lines are stringent requirements for future ...
Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrea...
1971PDFTech ReportDOT-TSC-NASA-71-9Integrated circuitsMetal workingCold workingUnited StatesUnited S...
Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at vario...
Commercial power MESFETs with Ti/W/Au gate metallization show a failure mode consisting of a decreas...
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
The presentation addresses the reliability of Au ball bonds of fifferent Au wire qualities on Al chi...
Failure modes of bipolar Schottky logic devices due to metallurgical degradation of PtSi/Ti-W/Al con...
Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated ...
Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500\u201...
An analysis of the possible failure modes of TTL-LS was carried out, with particular emphasis on lon...
Scanning electron microscopy, microphobe measurements, Auger electron spectroscopy and X-ray diffrac...
The stability of metal layers on semiconductors is a key issue for the device electrical performance...
Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very hig...
Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar te...
Planar vertical interconnects and low resistivity track lines are stringent requirements for future ...
Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrea...
1971PDFTech ReportDOT-TSC-NASA-71-9Integrated circuitsMetal workingCold workingUnited StatesUnited S...
Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at vario...
Commercial power MESFETs with Ti/W/Au gate metallization show a failure mode consisting of a decreas...
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
The presentation addresses the reliability of Au ball bonds of fifferent Au wire qualities on Al chi...