Impact Ionization Phenomena In AlGaAs/GaAs Hemts
- C., Canali
- Paccagnella, Alessandro
- P., Pisoni
- C., Tedesco
- P., Telaroli
- Zanoni, Enrico
Publication date
January 1991
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0018-9383 Citation count (estimate)
24Abstract
The impact ionization current in AlGaAs/GaAs HEMT's is evaluated by means of measurements of the gate current at high drain voltages. A previously reported method to calculate impact ionization coefficient in GaAs MESFET's is extended to HEMT's. Results agree with the hypothesis that impact ionization takes place nearly exclusively in GaAs, and closely follow previously reported data for the electron impact ionization coefficient in GaAs
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