Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETS and in AlGaAs/GaAs HEMTS at high drain voltages. The dominant mechanism for the emission of photons with h-nu > E(g) is the recombination between impact ionization generated holes and channel electrons
A study of light emission from GaAs metal\u2010semiconductor field effect transistors and its connec...
In this work we investigate, by means of electrical and both spectral and integral electroluminescen...
Summary form only given. Mastering hot-electron and impact-ionization effects is of crucial importan...
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place ...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electr...
Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMT's biased at hig...
It is shown that the dominant emission mechanism of photons with high energy (hv > E(g)) in GaAs MES...
Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMT's biased at hig...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
A study of light emission from GaAs metal‐semiconductor field effect transistors and its connection ...
This communication describes a detailed experimental investigation of light emitted from AlGaAs/GaAs...
A study of light emission from GaAs metal\u2010semiconductor field effect transistors and its connec...
In this work we investigate, by means of electrical and both spectral and integral electroluminescen...
Summary form only given. Mastering hot-electron and impact-ionization effects is of crucial importan...
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place ...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electr...
Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMT's biased at hig...
It is shown that the dominant emission mechanism of photons with high energy (hv > E(g)) in GaAs MES...
Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMT's biased at hig...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
A study of light emission from GaAs metal‐semiconductor field effect transistors and its connection ...
This communication describes a detailed experimental investigation of light emitted from AlGaAs/GaAs...
A study of light emission from GaAs metal\u2010semiconductor field effect transistors and its connec...
In this work we investigate, by means of electrical and both spectral and integral electroluminescen...
Summary form only given. Mastering hot-electron and impact-ionization effects is of crucial importan...
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