Add to ORKGRILC is mediated by an anelastic trap-assisted tunnelling through neutral defects. It depends from the oxide field during irradiation and it is maximum under zero-field condition. Neutral defect distribution is determined by the oxide field and charged precursor, likely hole traps. RILC grows linearly with the cumulative dos
Single ions impacting on SiO2 layers generate tracks of defects which may result in a Radiation Indu...
In this work we have investigated the behaviour of ultra thin gate oxide subjected to pulsed voltage...
SILC (stress induced leakage current) is the phenomenon of abnormal increase in low field gate curre...
Low-field leakage current has been measured in thin oxides after exposure to ionising radiation. Thi...
Contemporary Metal Oxide Semiconductor (MOS) FETs are fabricated by using deep-submicron technologie...
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to gamma radiation from a Co-60 sour...
SILC and RILC have been studied on similar devices. SILC and RILC have the same conduction mechanis...
Low-field leakage current appears as one of the main issues of very thin oxides, which may lead to t...
An analytical model of Radiation Induced Leakage Current (RILC) has been developed for ultra-thin ga...
An analytical model of Radiation Induced Leakage Current (RILC) has been developed for ultra-thin ga...
Stress induced leakage current after electrical stress and radiation induced leakage current after i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
INVITED PAPER We have briefly reviewed the most important degradation mechanisms affecting ultra-thi...
Constant current stress induced leakage currents are studied in very thin oxide devices, for both st...
Single ions impacting on SiO2 layers generate tracks of defects which may result in a Radiation Indu...
In this work we have investigated the behaviour of ultra thin gate oxide subjected to pulsed voltage...
SILC (stress induced leakage current) is the phenomenon of abnormal increase in low field gate curre...
Low-field leakage current has been measured in thin oxides after exposure to ionising radiation. Thi...
Contemporary Metal Oxide Semiconductor (MOS) FETs are fabricated by using deep-submicron technologie...
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to gamma radiation from a Co-60 sour...
SILC and RILC have been studied on similar devices. SILC and RILC have the same conduction mechanis...
Low-field leakage current appears as one of the main issues of very thin oxides, which may lead to t...
An analytical model of Radiation Induced Leakage Current (RILC) has been developed for ultra-thin ga...
An analytical model of Radiation Induced Leakage Current (RILC) has been developed for ultra-thin ga...
Stress induced leakage current after electrical stress and radiation induced leakage current after i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
INVITED PAPER We have briefly reviewed the most important degradation mechanisms affecting ultra-thi...
Constant current stress induced leakage currents are studied in very thin oxide devices, for both st...
Single ions impacting on SiO2 layers generate tracks of defects which may result in a Radiation Indu...
In this work we have investigated the behaviour of ultra thin gate oxide subjected to pulsed voltage...
SILC (stress induced leakage current) is the phenomenon of abnormal increase in low field gate curre...