Resonant Tunneling Diode Made Up of Mos2 Atomic-layered Materials

The two-dimensional layer of molybdenum disulfide (MoS2) material has recently attracted much interest and research due to its direct-gap property and application potential in electronic and optoelectronic devices. In this research, we made and measured a resonant tunneling diode made up of MoS2 atomic-layered material based on nanopore structure device. MoS2 high-quality crystalline films were synthesized and transferred on the top of nanopore. After that, Al films were thermally evaporated onto the both sides of the chip to form top and bottom electrodes for conductivity measurement and survey. The current-voltage characteristics displayed the negative differential resistance, which is a signature for resosnant tunneling diode. Temperature and magnetic field dependence of device properties were also measured and discussed