Add to ORKGThe results of numerical simulation allow to investigate the thermal conditions received by active heaters influence on the thermoelastic stresses and gas inclusions in sapphire. We carried out the experiments for defects detection in sapphire crystals. We suggest the recommendations about sapphire crystals growth and processing improvement for profitability increase in sapphire substrates production for microelectronics
(100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-...
A new method for producing controlled-geometry, controlled-crystallography, cracklike defects using ...
AbstractR-plane sapphire is the preferred substrate material for silicon-based radiation-hard device...
AbstractThe finite-element method has been used to study the thermal stress distribution in large-si...
The paper mentions some problems of automated control system development for growth of large (150 kg...
Synthetic crystalline sapphire is hard, transparent and inert to most chemical etchants. It is a pop...
Crystalline sapphire (Al2O3) is a hard and transparent material widely used in industry. When applyi...
Sapphire is a substrate of growing importance in semiconductor device manufacturing particularly in ...
A number of different aspects of Frenkel defect production are discussed in this thesis. Experiments...
In this article we present an integrated approach to sapphire crystals growth simulation. Thermally ...
The Alexander-Haasen model was originally used to model the multiplication of the mobile dislocation...
In the present work, an advanced numerical model is suggested to analyze heat transfer and flow patt...
NoThe work presented in this paper contributes to a wider research objective aiming at gaining a bet...
We report on the thermal stability of both structural and optical micromodifications created by ultr...
Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they c...
(100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-...
A new method for producing controlled-geometry, controlled-crystallography, cracklike defects using ...
AbstractR-plane sapphire is the preferred substrate material for silicon-based radiation-hard device...
AbstractThe finite-element method has been used to study the thermal stress distribution in large-si...
The paper mentions some problems of automated control system development for growth of large (150 kg...
Synthetic crystalline sapphire is hard, transparent and inert to most chemical etchants. It is a pop...
Crystalline sapphire (Al2O3) is a hard and transparent material widely used in industry. When applyi...
Sapphire is a substrate of growing importance in semiconductor device manufacturing particularly in ...
A number of different aspects of Frenkel defect production are discussed in this thesis. Experiments...
In this article we present an integrated approach to sapphire crystals growth simulation. Thermally ...
The Alexander-Haasen model was originally used to model the multiplication of the mobile dislocation...
In the present work, an advanced numerical model is suggested to analyze heat transfer and flow patt...
NoThe work presented in this paper contributes to a wider research objective aiming at gaining a bet...
We report on the thermal stability of both structural and optical micromodifications created by ultr...
Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they c...
(100) silicon thin films grown on (1ī02) sapphire substrates is the most significant of the silicon-...
A new method for producing controlled-geometry, controlled-crystallography, cracklike defects using ...
AbstractR-plane sapphire is the preferred substrate material for silicon-based radiation-hard device...