Leakage current in ultra thin oxides: SILC or Soft Breakdown?
- Cester, Andrea
- L., Bandiera
- Paccagnella, Alessandro
- G., Ghidini
Publication date
January 2001
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Low-field leakage current has been measured in ultra thin oxides (tox=3 nm) after Constant Current Stress. Such Stress Induced Leakage Current (SILC) features a growth kinetics which, in principle, can be described by the same exponential law as previously found for thicker oxide (> 4 nm). However by a deeper investigation, the characteristics of this leakage current appears more similar to those generally attributed to the Soft Breakdown rather than to SILC
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