In this work we have investigated the fluctuations of the gate current after the onset of the oxide Soft Breakdown (SB). Two fluctuation types affect the SB current: (a) transitions between two or more “metastable” current levels; (b) small current fluctuations within each current level. In a previous work [1] we investigated the large type-(a) transitions. In the present work we have studied the small current fluctuations, i.e. type-(b), mainly focused on the intrinsic instability of the SB conductance. Moreover we have modelled such fluctuations by taking in account such instability
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can...
The characteristics of the substrate current (Isub) after soft breakdown (SBD) in ultra-thin gate ox...
The characteristics of the gate current (Ig) and substrate current (Ib) of ultra-thin gate oxides (&...
We have addressed the problem of the gate current fluctuations after soft breakdown in thin gate oxi...
Abstract We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant...
In this work we studied the soft breakdown (SB) in ultra-thin gate oxides (<3 nm) subjected to const...
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical s...
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical s...
We have studied the Soft Breakdown failure mode in ultra-thin gate oxides subjected to Constant Curr...
In this work, the characteristics of the substrate current (I sub) to soft breakdowns (SBDs) in n-MO...
In this work, the characteristics of the substrate current to soft breakdowns (SBDs) in n-MOSFETs we...
We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant Current ...
Based on the tunneling current model, a simplified current model is developed for MOS devices after ...
We have investigated new aspects of the gate leakage current due to radiation-induced soft breakdown...
The time dependence of the gate voltage V-G(t) after soft breakdown of metal-oxide-semiconductor cap...
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can...
The characteristics of the substrate current (Isub) after soft breakdown (SBD) in ultra-thin gate ox...
The characteristics of the gate current (Ig) and substrate current (Ib) of ultra-thin gate oxides (&...
We have addressed the problem of the gate current fluctuations after soft breakdown in thin gate oxi...
Abstract We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant...
In this work we studied the soft breakdown (SB) in ultra-thin gate oxides (<3 nm) subjected to const...
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical s...
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical s...
We have studied the Soft Breakdown failure mode in ultra-thin gate oxides subjected to Constant Curr...
In this work, the characteristics of the substrate current (I sub) to soft breakdowns (SBDs) in n-MO...
In this work, the characteristics of the substrate current to soft breakdowns (SBDs) in n-MOSFETs we...
We studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to Constant Current ...
Based on the tunneling current model, a simplified current model is developed for MOS devices after ...
We have investigated new aspects of the gate leakage current due to radiation-induced soft breakdown...
The time dependence of the gate voltage V-G(t) after soft breakdown of metal-oxide-semiconductor cap...
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can...
The characteristics of the substrate current (Isub) after soft breakdown (SBD) in ultra-thin gate ox...
The characteristics of the gate current (Ig) and substrate current (Ib) of ultra-thin gate oxides (&...