Add to ORKGMost dangerous failure mechanisms of GaN HEMTs appear to involve trap generation, either due to hot electron degradation, reverse piezoelectric effects, or localized damage due to trap-asssisted current injection. Specific diagnostic techniques may assist reliability studies providing useful hints for device and material optimizatio
In this paper, we compare degradation modes and failure mechanisms of different AlGaN/GaN HEMT techn...
The identification of failure modes and mechanisms which may affect the reliability of GaN-based Hig...
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of G...
Most dangerous failure mechanisms of GaN HEMTs appear to involve trap generation, either due to hot ...
This talk reviews the physical mechanisms that limit the performance and the reliability of GaN-base...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
The identification of failure modes and mechanisms which may affect the reliability of GaN-based Hig...
In recent years, the number of published research studies on GaN HEMT reliability has increased expo...
In this paper we present the results of an experiment carried out on HEMT test structures, which wer...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
In this tutorial recent reliability data under DC and RF operation and the current understanding of ...
An analysis of the reliability of GaN high-electron-mobility transistors during dc and RF stress tes...
Failure modes and mechanisms of AlGaN/GaN High Electron Mobility Transistors are reviewed. Data from...
This Tutorial will present an overview of the reliability of Gallium Nitride transistors, including ...
Several groups have demonstrated nitride-based High Electron Mobility Transistors (HEMTs) with excel...
In this paper, we compare degradation modes and failure mechanisms of different AlGaN/GaN HEMT techn...
The identification of failure modes and mechanisms which may affect the reliability of GaN-based Hig...
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of G...
Most dangerous failure mechanisms of GaN HEMTs appear to involve trap generation, either due to hot ...
This talk reviews the physical mechanisms that limit the performance and the reliability of GaN-base...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
The identification of failure modes and mechanisms which may affect the reliability of GaN-based Hig...
In recent years, the number of published research studies on GaN HEMT reliability has increased expo...
In this paper we present the results of an experiment carried out on HEMT test structures, which wer...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
In this tutorial recent reliability data under DC and RF operation and the current understanding of ...
An analysis of the reliability of GaN high-electron-mobility transistors during dc and RF stress tes...
Failure modes and mechanisms of AlGaN/GaN High Electron Mobility Transistors are reviewed. Data from...
This Tutorial will present an overview of the reliability of Gallium Nitride transistors, including ...
Several groups have demonstrated nitride-based High Electron Mobility Transistors (HEMTs) with excel...
In this paper, we compare degradation modes and failure mechanisms of different AlGaN/GaN HEMT techn...
The identification of failure modes and mechanisms which may affect the reliability of GaN-based Hig...
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of G...