This communication reports on rapid, efficient synthesis of the metal-organic chemical vapor deposition (MOCVD) precursor (methylcyclopentadienyl)allylplatinum. The compound is shown to be an effective precursor for the deposition of platinum thin films giving deposits of high quality and purity, probably due to the nature of ligands which seems to be good leaving groups as confirmed by mass spectrometric pathway
We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source pr...
Thin films of high purity palladium can be prepared at low temperature (250$\sp\circ$C) metal-organi...
Organometallic chemical vapour deposition (OMCVD) films usually have carbon as an impurity. This com...
textWith the growing demand for miniaturization of devices and for new materials with useful propert...
The tremendous expansion of metal-organic chemical vapor deposition process (MOCVD) is accounted for...
[[abstract]]Treatment of beta-ketoiminates with [(allyl)Pd(mu-Cl)](2) affords volatile, air-stable a...
International audienceA new one-step method, entitled fluidized-bed metal-organic chemical vapor dep...
A new one-step method, entitled fluidized-bed metal-organic chemical vapor deposition (FBMOCVD) of p...
A review is presented of early and recent advances in the metal-organic chemical vapor deposition (M...
Chemical vapor deposition (CVD) is a process used especially in the microelectronics industry to dep...
A chemistry-based approach to designing precursors for the deposition of inorganic films requires co...
In this short paper an outline of the properties of an ideal precursor for MOCVD is given. Two syste...
Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G. Cyclopentadienyl germanes as novel precursors for the ...
The state of the art in research and application of processes of chemical vapour deposition of noble...
The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in parti...
We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source pr...
Thin films of high purity palladium can be prepared at low temperature (250$\sp\circ$C) metal-organi...
Organometallic chemical vapour deposition (OMCVD) films usually have carbon as an impurity. This com...
textWith the growing demand for miniaturization of devices and for new materials with useful propert...
The tremendous expansion of metal-organic chemical vapor deposition process (MOCVD) is accounted for...
[[abstract]]Treatment of beta-ketoiminates with [(allyl)Pd(mu-Cl)](2) affords volatile, air-stable a...
International audienceA new one-step method, entitled fluidized-bed metal-organic chemical vapor dep...
A new one-step method, entitled fluidized-bed metal-organic chemical vapor deposition (FBMOCVD) of p...
A review is presented of early and recent advances in the metal-organic chemical vapor deposition (M...
Chemical vapor deposition (CVD) is a process used especially in the microelectronics industry to dep...
A chemistry-based approach to designing precursors for the deposition of inorganic films requires co...
In this short paper an outline of the properties of an ideal precursor for MOCVD is given. Two syste...
Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G. Cyclopentadienyl germanes as novel precursors for the ...
The state of the art in research and application of processes of chemical vapour deposition of noble...
The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in parti...
We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source pr...
Thin films of high purity palladium can be prepared at low temperature (250$\sp\circ$C) metal-organi...
Organometallic chemical vapour deposition (OMCVD) films usually have carbon as an impurity. This com...