This paper reports on the optimisation of the growth parameters of NiO ultrathin films on Pd(1 0 0). Growth is performed by means of UHV metal deposition and post-oxidation cycles. Chemical and structural characterisation of the deposits is achieved by means of electron spectroscopy (X-ray photoelectron spectroscopy, XPS; angle resolved XPS) and electron diffraction techniques (low energy electron diffraction, LEED; X-ray photoelectron diffraction, XPD). Three growth procedures have been investigated, which differ for the particular growth parameters adopted in each case. We demonstrate that post-oxidation is effective in order to obtain epitaxial NiO only if the initial dose of Ni evaporated on the clean Pd(1 0 0) substrate exceeds a crit...
Nickel oxide (NiO) is a versatile wide band gap semiconductor material. At present, transparent cond...
A plasma‐enhanced atomic layer deposition (ALD) process is presented, capable of producing thin conf...
NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperatu...
This paper reports on the optimisation of the growth parameters of NiO ultrathin films on Pd(1 0 0)....
Reactivegrowth of NiO ultrathin films on Pd(1 0 0) has been performed by evaporating metallic Ni in ...
NiO ultrathin films have been grown on Pd(100) following a reactive deposition procedure. Ni has bee...
NiO ultrathin films have been prepared under UHV conditions on Ag(001) substrate by metal deposition...
The growth of ultrathin nickel oxide overlayers (nanolayers) on Pd(100) from submonolayer coverages ...
The oxidation of Ni(100) and Ni(111) at elevated temperatures and large oxygen exposures, typical of...
Low-energy and photoemission electron microscopy enables the determination of facet planes of polycr...
The formation of oxide films on pure Ni surfaces by low energy oxygen ion-beam bombardment at room t...
We have tested the use of atomic oxygen to prepare 3d oxide-metal interfaces for which standard reac...
We compare the structural transformations which take place during oxidation of Pd(100) and Ni(100) s...
The initial growth of Pt on the Ni(I 10)43 x 1)-O and NiO(110) surfaces has been studied by coaxial ...
This chapter will deal with the properties of ultrathin oxide layers on different substrates. We wil...
Nickel oxide (NiO) is a versatile wide band gap semiconductor material. At present, transparent cond...
A plasma‐enhanced atomic layer deposition (ALD) process is presented, capable of producing thin conf...
NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperatu...
This paper reports on the optimisation of the growth parameters of NiO ultrathin films on Pd(1 0 0)....
Reactivegrowth of NiO ultrathin films on Pd(1 0 0) has been performed by evaporating metallic Ni in ...
NiO ultrathin films have been grown on Pd(100) following a reactive deposition procedure. Ni has bee...
NiO ultrathin films have been prepared under UHV conditions on Ag(001) substrate by metal deposition...
The growth of ultrathin nickel oxide overlayers (nanolayers) on Pd(100) from submonolayer coverages ...
The oxidation of Ni(100) and Ni(111) at elevated temperatures and large oxygen exposures, typical of...
Low-energy and photoemission electron microscopy enables the determination of facet planes of polycr...
The formation of oxide films on pure Ni surfaces by low energy oxygen ion-beam bombardment at room t...
We have tested the use of atomic oxygen to prepare 3d oxide-metal interfaces for which standard reac...
We compare the structural transformations which take place during oxidation of Pd(100) and Ni(100) s...
The initial growth of Pt on the Ni(I 10)43 x 1)-O and NiO(110) surfaces has been studied by coaxial ...
This chapter will deal with the properties of ultrathin oxide layers on different substrates. We wil...
Nickel oxide (NiO) is a versatile wide band gap semiconductor material. At present, transparent cond...
A plasma‐enhanced atomic layer deposition (ALD) process is presented, capable of producing thin conf...
NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperatu...