Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

International audienceIn this paper the minority carrier lifetime (tau) in the base region of an n(+)/p silicon solar cell is calculated. The open circuit voltage decay method is employed. The influence of carrier recombination in the space charge region is considered through an interface recombination velocity, S-i. An analytical expression for tau is obtained and its value for one particular case is reported