International audienceUltimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific application requirements like ultra mechanical flexibility, heat dissipation, transparency while retaining same f(T)/f(max) performance and improving harmonic rejection when compared to conventional rigid SOI
This paper presents an innovative approach for wafer scale transfer of ultrathin silicon chips on fl...
This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities fo...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...
International audienceUltimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstr...
International audienceBased on a simple process referred to as ultimate thinning-and-transfer-bondin...
International audienceThinned CMOS chips transfer-bonded onto a compliant host substrate remain to d...
International audienceIn this work we demonstrate a method to transfer high-performance industrial C...
Le développement de nombreuses applications nomades, souples, déformables et sur de larges surfaces ...
Le développement de nombreuses applications nomades, souples, déformables et sur de larges surfaces ...
The constant pressure on performance improvement in RF processes is aimed at higher frequencies, les...
Co-integration of digital and analog systems using off-chip technologies is difficult, onerous, and ...
A processing technology based upon a temporary bond—debond approach has been developed that enables ...
During last decades, CMOS technology scaling down has enabled high frequency operation up to mm-W an...
International audienceThis study describes a process for transferring a 200 nm Si thin film from a S...
This paper presents a low-temperature process to transfer devices on ultrathin silicon layers from a...
This paper presents an innovative approach for wafer scale transfer of ultrathin silicon chips on fl...
This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities fo...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...
International audienceUltimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstr...
International audienceBased on a simple process referred to as ultimate thinning-and-transfer-bondin...
International audienceThinned CMOS chips transfer-bonded onto a compliant host substrate remain to d...
International audienceIn this work we demonstrate a method to transfer high-performance industrial C...
Le développement de nombreuses applications nomades, souples, déformables et sur de larges surfaces ...
Le développement de nombreuses applications nomades, souples, déformables et sur de larges surfaces ...
The constant pressure on performance improvement in RF processes is aimed at higher frequencies, les...
Co-integration of digital and analog systems using off-chip technologies is difficult, onerous, and ...
A processing technology based upon a temporary bond—debond approach has been developed that enables ...
During last decades, CMOS technology scaling down has enabled high frequency operation up to mm-W an...
International audienceThis study describes a process for transferring a 200 nm Si thin film from a S...
This paper presents a low-temperature process to transfer devices on ultrathin silicon layers from a...
This paper presents an innovative approach for wafer scale transfer of ultrathin silicon chips on fl...
This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities fo...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...