Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements

We report on a spectroscopic characterization of electrically compensated high resistivity Fe-implanted InP and GaInP by room temperature space-charge-limited-current measurements. This method results to be a reliable and powerful tool to obtain a quantification of the degree of compensation and the free carrier concentration in the samples, together with the activation energy and density of states distribution of the dominant majority carrier traps. Moreover, by correlating these results with temperature dependent electrical spectroscopy analyses, it is possible to obtain information on material parameters, such as the carrier mobility, not always easily accessible by direct measurements