Add to ORKGWith this work we have performed a specific set of experiments, in order to analyze the degradation of 1Watt InGaN/GaN LEDs emitting at 420 nm produced by SemiLeds. LEDs have been subjected to 350mA dc current stress at different temperatures, ranging from 60 to 100\ub0C; stress time is up to 500hrs. A complete optical, electrical and capacitive device characterization has been carried out during ageing at predefined time steps
We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electrolumin...
In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spect...
Optical and electrical properties of high brightness blue InGaN/GaN LEDs submitted to high direct cu...
With this work we report on the degradation of GaN 420nm high brightness LEDs. Devices have been sub...
Because of their ultra brightness, GaN light emitting diodes (LEDs) becomes a promising light source...
This paper presents failure modes observed in long-term aging of high-brightness GaN/InGaN LEDs. The...
The study of the electro-optical properties of semiconductors has represented one of the major topic...
National Natural Science Foundation of China [60476022]; National High Technology Research and Devel...
With this paper we give an overview on the degradation mechanisms that limit the reliability of whit...
Optical power of violet light emitting diodes were measured during DC aging test up to 312 h at diff...
In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spect...
We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressin...
We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electrolumin...
This work presents the results of an extensive DC current aging and failure analysis carried out on ...
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electrolumin...
In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spect...
Optical and electrical properties of high brightness blue InGaN/GaN LEDs submitted to high direct cu...
With this work we report on the degradation of GaN 420nm high brightness LEDs. Devices have been sub...
Because of their ultra brightness, GaN light emitting diodes (LEDs) becomes a promising light source...
This paper presents failure modes observed in long-term aging of high-brightness GaN/InGaN LEDs. The...
The study of the electro-optical properties of semiconductors has represented one of the major topic...
National Natural Science Foundation of China [60476022]; National High Technology Research and Devel...
With this paper we give an overview on the degradation mechanisms that limit the reliability of whit...
Optical power of violet light emitting diodes were measured during DC aging test up to 312 h at diff...
In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spect...
We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressin...
We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electrolumin...
This work presents the results of an extensive DC current aging and failure analysis carried out on ...
This paper reports an analysis of InGaN/GaN LEDs degradation under dc and pulsed current conditions....
We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electrolumin...
In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spect...
Optical and electrical properties of high brightness blue InGaN/GaN LEDs submitted to high direct cu...