This paper focuses on the investigation and implementation of a high-performance power conversion system to reduce the overvoltage phenomenon in variable speed electric drive applications. Particularly, the pros and cons of using Silicon Carbide power MOSFETs in the power converter when a long power cable is employed in electric motor drive systems has been addressed. The three-phase two level inverter with the addition of snubber circuits that consist of capacitors and diodes has been investigated, designed and tested in order to mitigate the overvoltage problems without sacrificing the conversion efficiency. Given that the snubber circuit added to the switches can increase losses, an additional circuit is used to recover the energy...
The demand for increased power densities results in improvement in efficiency, reduction in switchin...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
This article proposes a quasi-three-level (Q3L) PWM-based module-parallel inverter to address two ma...
This paper focuses on the investigation and implementation of a high-performance power conversion s...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, are becoming increasingly popul...
Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electric...
Wideband-gap (WBG) power devices such as silicon carbide (SiC) switches have become increasingly pop...
The widespread deployment of electric vehicles (EVs) requires high efficiency of traction inverters ...
Currently, silicon carbide (SiC) MOSFETs are several times higher in cost than the equivalent silico...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
The recent commercialization SiC technology, has made it desirable to use SiC in electrical motor dr...
The high frequency operation of the WBG devices such as SiC emphasizes the effect of parasitics, gen...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
High energy efficiency and increasing the working frequency of the converter will make it possible t...
This paper investigates the inverter nonlinearities in a drive system based on silicon carbide metal...
The demand for increased power densities results in improvement in efficiency, reduction in switchin...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
This article proposes a quasi-three-level (Q3L) PWM-based module-parallel inverter to address two ma...
This paper focuses on the investigation and implementation of a high-performance power conversion s...
Silicon Carbide (SiC) MOSFETs, as wide-bandgap semiconductor device, are becoming increasingly popul...
Wide bandgap (WBG) power devices such as silicon carbide (SiC) can viably supply high speed electric...
Wideband-gap (WBG) power devices such as silicon carbide (SiC) switches have become increasingly pop...
The widespread deployment of electric vehicles (EVs) requires high efficiency of traction inverters ...
Currently, silicon carbide (SiC) MOSFETs are several times higher in cost than the equivalent silico...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
The recent commercialization SiC technology, has made it desirable to use SiC in electrical motor dr...
The high frequency operation of the WBG devices such as SiC emphasizes the effect of parasitics, gen...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
High energy efficiency and increasing the working frequency of the converter will make it possible t...
This paper investigates the inverter nonlinearities in a drive system based on silicon carbide metal...
The demand for increased power densities results in improvement in efficiency, reduction in switchin...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
This article proposes a quasi-three-level (Q3L) PWM-based module-parallel inverter to address two ma...