Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). This makes III-nitride materials suitable for high-efficient and energy-saving optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs). The Nobel Prize in Physics 2014 was awarded for the invention of efficient GaN blue LEDs, which further accelerated the research in the field of group III-n...
GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generat...
The demand of higher and higher storage density in digital data processing applicationslead in the l...
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transi...
Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN...
Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN...
The transition to energy efficient smart grid and wireless communication with improved capacity requ...
(Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to...
The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the l...
The combination of wide band-gap and built-in electrical polarization renders III-nitride HEMTs idea...
Recently reported N-polar gallium nitride (GaN) high electron mobility transistors (HEMTs) have show...
Due to their wide band-gaps and excellent chemical & mechanical stability, III-nitride semiconductor...
Although MOCVD is regarded as the preferred growth method for commercial grade nitride-based semicon...
Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) ...
This paper reviews the progress of N-polar (000 1) GaN high frequency electronics that aims at addre...
Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting...
GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generat...
The demand of higher and higher storage density in digital data processing applicationslead in the l...
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transi...
Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN...
Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN...
The transition to energy efficient smart grid and wireless communication with improved capacity requ...
(Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to...
The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the l...
The combination of wide band-gap and built-in electrical polarization renders III-nitride HEMTs idea...
Recently reported N-polar gallium nitride (GaN) high electron mobility transistors (HEMTs) have show...
Due to their wide band-gaps and excellent chemical & mechanical stability, III-nitride semiconductor...
Although MOCVD is regarded as the preferred growth method for commercial grade nitride-based semicon...
Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) ...
This paper reviews the progress of N-polar (000 1) GaN high frequency electronics that aims at addre...
Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting...
GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generat...
The demand of higher and higher storage density in digital data processing applicationslead in the l...
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transi...