Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and t...
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled...
This PhD work focuses on the study of III-V semiconductor nanostructures for the development of lase...
The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalor...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studie...
Producción CientíficaWe describe the optical emission and the carrier dynamics of an ensemble of sel...
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a t...
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs...
Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic ...
The excitation power dependence of radiative transitions in the type-II GaSb/GaAs quantum dots struc...
The excitation power dependence of radiative transitions in the type-II GaSb/GaAs quantum dots struc...
International audienceTaking advantage of low production costs and large integration scale, silicon ...
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs...
Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photol...
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled...
This PhD work focuses on the study of III-V semiconductor nanostructures for the development of lase...
The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalor...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studie...
Producción CientíficaWe describe the optical emission and the carrier dynamics of an ensemble of sel...
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a t...
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs...
Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic ...
The excitation power dependence of radiative transitions in the type-II GaSb/GaAs quantum dots struc...
The excitation power dependence of radiative transitions in the type-II GaSb/GaAs quantum dots struc...
International audienceTaking advantage of low production costs and large integration scale, silicon ...
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs...
Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photol...
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled...
This PhD work focuses on the study of III-V semiconductor nanostructures for the development of lase...
The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalor...