Suppressing photoinduced charge recombination at the BiVO4||NiOOH junction by sandwiching an oxygen vacancy layer for efficient photoelectrochemical water oxidation

Nickel oxyhydroxide (NiOOH) is regarded as one of the promising cocatalysts to enhance the catalytic performance of photoanodes but suffers from serious interfacial charge-carrier recombination at the photoanode|| NiOOH interface. In this work, surface-engineered BiVO4 photoanodes are fabricated by sandwiching an oxygen vacancy (Ovac) interlayer between BiVO4 and NiOOH. The surface Ovac interlayer is introduced on BiVO4 by a chemical reduction treatment using a mild reducing agent, sodium hypophosphite. The induced Ovac can alleviate the interfacial charge-carrier recombination at the BiVO4||NiOOH junction, resulting in efficient charge separation and transfer efficiencies, while an outer NiOOH layer is coated to prevent the Ovac layer from degradation. As a result, the as-prepared NiOOH-P-BiVO4 photoanode exhibits a high photocurrent density of 3.2 mA cm�2 at 1.23 V vs. RHE under the irradiatio