Add to ORKGABSTRACT A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 um CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its e!ectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad - 1.7 Mrad depending on the type of radiation
Abstract In this paper, we present a new radiation tolerant CMOS standard cell library, and demonst...
Total ionizing dose effects are studied in 130-nm transistors and pixel sensors in a vertically inte...
International audienceIndividual transistors, resistors and shift registers have been designed using...
A new pixel readout prototype has been developed at CERN for high- energy physics applications. This...
A radiation tolerant pixel detector readout chip has been developed in a commercial 0.25 mu m CMOS p...
This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 mu m C...
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circui...
CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-e...
This paper proposes a new design method to enhance the radiation hardness of circuits for the next g...
Over the last decades, the use of CMOS integrated circuits has largely diffused in many different fi...
Electronic circuits and systems are employed in a number of different fields where some degree of ra...
Radiation hardness is a major concern for electronics in high luminosity colliders for high energy p...
CMOS image sensors are nowadays extensively considered for several space applications. Mission requi...
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS...
High energy and nuclear physics experiments need tracking devices with increasing spatial precision ...
Abstract In this paper, we present a new radiation tolerant CMOS standard cell library, and demonst...
Total ionizing dose effects are studied in 130-nm transistors and pixel sensors in a vertically inte...
International audienceIndividual transistors, resistors and shift registers have been designed using...
A new pixel readout prototype has been developed at CERN for high- energy physics applications. This...
A radiation tolerant pixel detector readout chip has been developed in a commercial 0.25 mu m CMOS p...
This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 mu m C...
130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circui...
CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-e...
This paper proposes a new design method to enhance the radiation hardness of circuits for the next g...
Over the last decades, the use of CMOS integrated circuits has largely diffused in many different fi...
Electronic circuits and systems are employed in a number of different fields where some degree of ra...
Radiation hardness is a major concern for electronics in high luminosity colliders for high energy p...
CMOS image sensors are nowadays extensively considered for several space applications. Mission requi...
This paper presents a study of the ionizing radiation tolerance of analog parameters of 0.18-um CMOS...
High energy and nuclear physics experiments need tracking devices with increasing spatial precision ...
Abstract In this paper, we present a new radiation tolerant CMOS standard cell library, and demonst...
Total ionizing dose effects are studied in 130-nm transistors and pixel sensors in a vertically inte...
International audienceIndividual transistors, resistors and shift registers have been designed using...