Photonic jets writing of quantum dots with intrinsic photoluminescence collection enhancement(∗)

Owing to their ability to generate non-classical light states, quantum dots (QDs) are ideal candidates for the large-scale deployment of quantum information technologies. However, semiconductor QDs alone lack the high photon collection efficiency needed by these technologies. In this work we present a laser writing technique for the fabrication of QDs self-aligned with dielectric microspheres, which, in turn, increase the collection efficiency of the system of a factor 7.3 ± 0.7. That technique exploits the use of photonic nanojets, produced by illuminating the microspheres, to selectively break the N-H bond in a GaAs/GaAs1−xNx:H/GaAs quantum well, thus fabricating GaAs1−xNx QDs