Near-threshold computing embodies an intriguing choice for extending mobile processor battery life due to its high energy efficiency. However, process, voltage and temperature variations cause a significantly high failure rate of level 1 cache SRAM cells in the near-threshold regime compared to the super-threshold regime. In this work, we show that faulty cells in the near-threshold regime are highly clustered in certain regions of the cache. We then propose a low overhead technique to dynamically reduce the performance penalty due to process variations by exploiting the spatial congregation of faulty cells and application cache behaviors. Our experimental results demonstrate up to 78% reduction in performance loss over two state-of-art tec...
Caches are known to consume a large part of total microprocessor power. Traditionally, voltage scali...
As the technology continuous to shrink, power consumption appears to be the main design parameter. O...
Transistors per area unit double in every new technology node. However, the electric field density a...
Near-Threshold Computing embodies an intriguing choice for mobile processors due to the promise of s...
Improving energy efficiency is critical to increasing computing capability, from mobile devices oper...
Battery life is an important concern for modern embedded processors. Supply voltage scaling techniqu...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
To continue reducing voltage in scaled technologies, both circuit and architecture-level resiliency ...
Historically, the increase of transistor devices per area of chip has been one of the key drivers of...
Complex approaches to fault-tolerant voltage-scalable (FTVS) SRAM cache architectures can suffer fro...
Power density has become the limiting factor in technology scaling as power budget restricts the amo...
Power density has become the limiting factor in technology scaling as power budget restricts the amo...
Abstract—Power density has become the limiting factor in technology scaling as power budget restrict...
Abstract—Power density has become the limiting factor in technology scaling as power budget limits t...
Transistors per area unit double in every new technology node. However, the electric field density a...
Caches are known to consume a large part of total microprocessor power. Traditionally, voltage scali...
As the technology continuous to shrink, power consumption appears to be the main design parameter. O...
Transistors per area unit double in every new technology node. However, the electric field density a...
Near-Threshold Computing embodies an intriguing choice for mobile processors due to the promise of s...
Improving energy efficiency is critical to increasing computing capability, from mobile devices oper...
Battery life is an important concern for modern embedded processors. Supply voltage scaling techniqu...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
To continue reducing voltage in scaled technologies, both circuit and architecture-level resiliency ...
Historically, the increase of transistor devices per area of chip has been one of the key drivers of...
Complex approaches to fault-tolerant voltage-scalable (FTVS) SRAM cache architectures can suffer fro...
Power density has become the limiting factor in technology scaling as power budget restricts the amo...
Power density has become the limiting factor in technology scaling as power budget restricts the amo...
Abstract—Power density has become the limiting factor in technology scaling as power budget restrict...
Abstract—Power density has become the limiting factor in technology scaling as power budget limits t...
Transistors per area unit double in every new technology node. However, the electric field density a...
Caches are known to consume a large part of total microprocessor power. Traditionally, voltage scali...
As the technology continuous to shrink, power consumption appears to be the main design parameter. O...
Transistors per area unit double in every new technology node. However, the electric field density a...