The Process-Variation (PV) effect is a major reliability concern in semiconductor industry as the technology node continues shrinking. As the crucial component in modern processors, cache is vulnerable to PV-induced timing-errors due to its large scale while low logic path depth. To tolerate this timing-error in cache, asymmetric pipelining has been employed, which has low implementation costs while induces unnecessary latency overhead thus degrades the performance of the whole processor. In this paper, we proposes a novel approach to apply variable latency in L1 cache access thus significantly reduce the performance overhead in tolerating the PV-induced timing-errors. Our results show that the performance loss of our approach on processors...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Aggressive technology scaling to 14 nm technology node increases variability in transistors performa...
STT-RAM (Spin Transfer Torque Random Access Memory) has been extensively researched as a potential r...
The Process-Variation (PV) effect is a major reliability concern in semiconductor industry as the te...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
IEEE Computer Society Annual Symposium on VLSI : April 7-9, 2008 : Montpellier, FranceThe share of l...
Low-latency data access is essential for performance. To achieve this, processors use fast first-lev...
4th International Workshop on Dependable Embedded Systems : October 9, 2007 : Beijing, ChinaLeakage ...
As transistor feature sizes continue to shrink into the sub-90nm range and beyond, the effects of pr...
As the performance gap between the processor cores and the memory subsystem increases, designers are...
For many years, the performance of microprocessors has depended on the miss ratio of L1 caches. The ...
Transistors per area unit double in every new technology node. However, the electric field density a...
Over the lifetime of a microprocessor, the Hot Carrier Injection (HCI) phenomenon degrades the thres...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Aggressive technology scaling to 14 nm technology node increases variability in transistors performa...
STT-RAM (Spin Transfer Torque Random Access Memory) has been extensively researched as a potential r...
The Process-Variation (PV) effect is a major reliability concern in semiconductor industry as the te...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
As technology scales, more sophisticated fabrication processes cause variations in many different pa...
IEEE Computer Society Annual Symposium on VLSI : April 7-9, 2008 : Montpellier, FranceThe share of l...
Low-latency data access is essential for performance. To achieve this, processors use fast first-lev...
4th International Workshop on Dependable Embedded Systems : October 9, 2007 : Beijing, ChinaLeakage ...
As transistor feature sizes continue to shrink into the sub-90nm range and beyond, the effects of pr...
As the performance gap between the processor cores and the memory subsystem increases, designers are...
For many years, the performance of microprocessors has depended on the miss ratio of L1 caches. The ...
Transistors per area unit double in every new technology node. However, the electric field density a...
Over the lifetime of a microprocessor, the Hot Carrier Injection (HCI) phenomenon degrades the thres...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Aggressive technology scaling to 14 nm technology node increases variability in transistors performa...
STT-RAM (Spin Transfer Torque Random Access Memory) has been extensively researched as a potential r...