International audienceThis paper proposes an analysis for the main microstructural changes at the chip topside level in the metallic interconnections of SKIM63 IGBT power modules due to aging processes caused by power cycling. The objective is to correlate these changes with the degradation processes dominating such positions. In this study, it is deduced that grains stability drives their texture evolution upon cycling. Transformations of texture components, which indicate whether the structure is recrystallized or deformed, are analyzed at different cycling stages. Afterward, the effect of the evolution of the disorientation angle's distribution on the crack passage is discussed. The size of grains directly related to their strength was a...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...
Solder-attached IGBT power modules are widely use in renewable energy and smart grid applications wh...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
International audienceThis paper proposes an analysis for the main microstructural changes at the ch...
The thermal fatigue of the bond-wire contacts at the topside interconnections of power electronic de...
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis...
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2018...
International audienceThe long-term reliability of power devices for applications in the automotive ...
Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applicati...
Electro-thermal and thermo-mechanical aging of topside metallic components of semiconductor power de...
International audienceThe long-term reliability of modern power MOSFETs is assessed through accelera...
Under the action of a complex and harsh working environment, the damage of the IGBT power module...
Fatigue cracking in the inter-face between the heavy Al wire and the Al metallization of the power s...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...
Solder-attached IGBT power modules are widely use in renewable energy and smart grid applications wh...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
International audienceThis paper proposes an analysis for the main microstructural changes at the ch...
The thermal fatigue of the bond-wire contacts at the topside interconnections of power electronic de...
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis...
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2018...
International audienceThe long-term reliability of power devices for applications in the automotive ...
Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applicati...
Electro-thermal and thermo-mechanical aging of topside metallic components of semiconductor power de...
International audienceThe long-term reliability of modern power MOSFETs is assessed through accelera...
Under the action of a complex and harsh working environment, the damage of the IGBT power module...
Fatigue cracking in the inter-face between the heavy Al wire and the Al metallization of the power s...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...
Solder-attached IGBT power modules are widely use in renewable energy and smart grid applications wh...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...