A 2 × 2 square pixel In0.5Ga0.5P p+-i-n+ mesa photodiode array was fabricated and investigated for its suitability in photon counting X-ray and γ-ray spectroscopy. Each pixel, which had an area of 200μm×200μm and a 5μm thick i layer, was coupled to a low-noise charge-sensitive preamplifier and standard onwards readout electronics to form an X-ray and γ-ray photon counting spectrometer. The pixels were illuminated in turn with an 55Fe radioisotope X-ray source, an 241Am radioisotope X-ray and γ-ray source, and a 109Cd radioisotope X-ray and γ-ray source. The mean value (across all pixels) of the best energy resolution (Full Width at Half Maximum, FWHM) at 20 °C was 770 eV ± 30 eV at 5.9 keV, 840 eV ± 20 eV at 22.16 keV, and 870 eV ± 30 eV at...
The development of new x-ray and γ-ray spectrometers based on AlInP photodiodes with increased quant...
Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diamete...
A prototype 200 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiode (2 μm i-layer) was characterised a...
A 2 × 2 square pixel In0.5Ga0.5P p+-i-n+ mesa photodiode array was fabricated and investigated for i...
An AlInP 3 × 3 pixel monolithic array was fabricated from a p -i-n structure wafer (6 μm thick i la...
A GaAs 2 × 2 pixel monolithic X-ray detector array was fabricated from material grown by metalorgani...
In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been develop...
Two custom-made In0.5Ga0.5P p+-i-n+ circular mesa spectroscopic X-ray photodiodes with different dia...
A prototype In0.53Ga0.47As p+-i-n+ x-ray photodiode, fabricated from material grown by metalorganic ...
A commercial-off-the-shelf (COTS) Si p+-i-n+ photodiode (Hamamatsu S5973), designed for visible and ...
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were ele...
A custom-made Al0.52In0.48P p+-i-n+ circular mesa X-ray photodiode (200 μm diameter; 2 μm i layer th...
AbstractThree custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200µm diameter, 3µm i layer) we...
© 2016 Author(s). Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n...
In this paper for the first time, an InGaP photodiode was used in a high temperature tolerant X-ray ...
The development of new x-ray and γ-ray spectrometers based on AlInP photodiodes with increased quant...
Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diamete...
A prototype 200 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiode (2 μm i-layer) was characterised a...
A 2 × 2 square pixel In0.5Ga0.5P p+-i-n+ mesa photodiode array was fabricated and investigated for i...
An AlInP 3 × 3 pixel monolithic array was fabricated from a p -i-n structure wafer (6 μm thick i la...
A GaAs 2 × 2 pixel monolithic X-ray detector array was fabricated from material grown by metalorgani...
In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been develop...
Two custom-made In0.5Ga0.5P p+-i-n+ circular mesa spectroscopic X-ray photodiodes with different dia...
A prototype In0.53Ga0.47As p+-i-n+ x-ray photodiode, fabricated from material grown by metalorganic ...
A commercial-off-the-shelf (COTS) Si p+-i-n+ photodiode (Hamamatsu S5973), designed for visible and ...
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were ele...
A custom-made Al0.52In0.48P p+-i-n+ circular mesa X-ray photodiode (200 μm diameter; 2 μm i layer th...
AbstractThree custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200µm diameter, 3µm i layer) we...
© 2016 Author(s). Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n...
In this paper for the first time, an InGaP photodiode was used in a high temperature tolerant X-ray ...
The development of new x-ray and γ-ray spectrometers based on AlInP photodiodes with increased quant...
Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diamete...
A prototype 200 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiode (2 μm i-layer) was characterised a...