Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal

V., Vitale
M. T., Todaro
T., Stomeo
E., Margapoti
A., Passaseo
M., De Giorgi
M., De Vittorio
R., Cingolani
Romanato, Filippo
P., Candeloro
E., Di Fabrizio

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Publication date

January 2003

DOI

10.1016/S0167-9317(03)00144-8

Publisher

Elsevier BV

ISSN

0167-9317

Abstract

We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states