EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES
- ZANONI, ENRICO
- NEVIANI, ANDREA
- TEDESCO C
- MANFREDI M
- CANALI C.
Publication date
January 1994
DOI Publisher
IOP Publishing Limited:Dirac House, Temple Back, Bristol BS1 6BE United Kingdom:011 44 117 9297481, EMAIL: custserv@iop.org, INTERNET: http://www.iop.org, Fax: 011 44 117 9294318 ISSN
0268-1242Abstract
This work reviews the most recent experimntal results concerning the characterization of hot-elecctron effects and light-emission phenomena in GaAs MESFET's, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMT's), and AlGaAs/GaAs heterojunction bipolar transistors (HBT's)
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