Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported
Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive mag...
Nickel oxide (NiO) thin films were formed by RF reactive magnetron sputtering onto glass substrates....
<div><p>NiO thin films were deposited on Si and Corning 1737 glass substrates using radio frequency ...
This work studies dependences of resistivity, carrier concentration, mobility and structural propert...
This letter shows that the NiO-based structure with different anodes has different resistive switchi...
Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and ...
Although largely studied, contradictory results on nickel oxide (NiO) properties can be found in the...
AbstractElectrical properties of p-NiO films fabricated by RF magnetron sputtering were characterize...
Funder: Aziz FoundationFunder: Downing College, CambridgeFunder: Isaac Newton Trust; Id: http://dx.d...
Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have be...
In this study, we report on the synthesis optimization of NiO thin film to grow preferentially along...
Nickel oxide (NiO) thin films were successfully deposited on Corning 7059 glass substrates at differ...
International audienceNiO thin films with random, fiber and in-plane textures have been successfully...
Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The e...
Here, we report a simple method to achieve binder free nickel oxide (NiO) thin film using an electro...
Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive mag...
Nickel oxide (NiO) thin films were formed by RF reactive magnetron sputtering onto glass substrates....
<div><p>NiO thin films were deposited on Si and Corning 1737 glass substrates using radio frequency ...
This work studies dependences of resistivity, carrier concentration, mobility and structural propert...
This letter shows that the NiO-based structure with different anodes has different resistive switchi...
Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and ...
Although largely studied, contradictory results on nickel oxide (NiO) properties can be found in the...
AbstractElectrical properties of p-NiO films fabricated by RF magnetron sputtering were characterize...
Funder: Aziz FoundationFunder: Downing College, CambridgeFunder: Isaac Newton Trust; Id: http://dx.d...
Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have be...
In this study, we report on the synthesis optimization of NiO thin film to grow preferentially along...
Nickel oxide (NiO) thin films were successfully deposited on Corning 7059 glass substrates at differ...
International audienceNiO thin films with random, fiber and in-plane textures have been successfully...
Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The e...
Here, we report a simple method to achieve binder free nickel oxide (NiO) thin film using an electro...
Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive mag...
Nickel oxide (NiO) thin films were formed by RF reactive magnetron sputtering onto glass substrates....
<div><p>NiO thin films were deposited on Si and Corning 1737 glass substrates using radio frequency ...