PSP-based compact FinFET model describing dc and RF measurements
- G.D.J. Smit
- A.J. Scholten
- N. Serra
- R.M.T. Pijper
- R. van Langevelde
- A. Mercha
- G. Gildenblat
- D.B.M. Klaassen
Publication date
January 2006
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances
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