Characterization and modelling of gate current injection in embedded non-volatile flash memory
- ZAKA A
- GARETTO D
- RIDEAU D
- PALESTRI Pierpaolo
- MANCEAU J.-P
- DORNEL E
- RAFHAY Q
- CLERC R
- LEBLEBICI Y
- TAVERNIER C
- JAOUEN H
Publication date
January 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Hot Carrier Injection (HCI) is investigated from the experimental and modelling perspectives. Extensive characterization of HCI is performed on ash devices to overcome the difculties arising from direct gate injection measurements. Furthermore, a semi-analytical approach has been developped, capable of modelling both ash cell\u2019s electrostatics during transient operation and gate current under HCI by a non-local model valid for long and short channel devices
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