Quasi Ballistic transport in advanced MOSFET devices

R. Clerc
P.Palestri
Q. Rafhay
M. Ferrier
G. Pananakakis
G. Ghibaudo
L. Selmi

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Publication date

January 2007

DOI

10.1109/SMICND.2007.4519642

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

ISSN

1545-827X

Abstract

The Physics and understanding of ballistic and quasi ballistic transport in nanoMOSFET is reviewed, underlying main concepts, analytical models and open questions in this area

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Quasi Ballistic transport in advanced MOSFET devices

Abstract

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Quasi Ballistic transport in advanced MOSFET devices

Abstract

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