Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger the...
While current-induced torque by orbital current has been experimentally found in various structures,...
The Rashba physics has been intensively studied in the field of spin orbitronics for the purpose of ...
We investigated the generation, manipulation, and detection of non-equilibrium spin accumulation in ...
Converting charge current into spin current is one of the main mechanisms exploited in spintronics. ...
The Edelstein effect produces a homogeneous magnetization in nonmagnetic materials with broken inver...
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti...
We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in an oxide inte...
Contains fulltext : 203737.pdf (publisher's version ) (Open Access)5 p
International audienceOxide interfaces exhibit a broad range of physical effects stemming from broke...
The anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ o...
The realization of interfaces between different transition metal oxides has heralded a new era of ma...
The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in n...
Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-or...
Advances in growth technology of oxide materials allow single atomic layer control of heterostructur...
Linear and non-linear transport properties through an atomic-size point contact based on oxides two-...
While current-induced torque by orbital current has been experimentally found in various structures,...
The Rashba physics has been intensively studied in the field of spin orbitronics for the purpose of ...
We investigated the generation, manipulation, and detection of non-equilibrium spin accumulation in ...
Converting charge current into spin current is one of the main mechanisms exploited in spintronics. ...
The Edelstein effect produces a homogeneous magnetization in nonmagnetic materials with broken inver...
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti...
We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in an oxide inte...
Contains fulltext : 203737.pdf (publisher's version ) (Open Access)5 p
International audienceOxide interfaces exhibit a broad range of physical effects stemming from broke...
The anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ o...
The realization of interfaces between different transition metal oxides has heralded a new era of ma...
The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in n...
Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-or...
Advances in growth technology of oxide materials allow single atomic layer control of heterostructur...
Linear and non-linear transport properties through an atomic-size point contact based on oxides two-...
While current-induced torque by orbital current has been experimentally found in various structures,...
The Rashba physics has been intensively studied in the field of spin orbitronics for the purpose of ...
We investigated the generation, manipulation, and detection of non-equilibrium spin accumulation in ...