Modelling of charge injection by multi-photon absorption in GaN-on-Si HEMTs for SEE testing

International audienceThis paper presents the numerical evaluation of different multiphotonic absorption mechanisms to be used for backside laser testing of single-event effects in GaN-on-Si HEMTs. The optical transmission through the complete stack of layers of three commercial references is calculated. Experimental results illustrating the possibility to use three-photon absorption for charge injection in the GaN layer are presented. The possible contribution of higher-order optical absorption in the buffer layers is discussed