This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization
Unstrained and strained triple-gate SOI devices under different strain techniques are studied experi...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
This paper presents both analytical models and Monte Carlo simulations concerning strain engineering...
his study combines direct measurements of strain, electrical mobility measurements, and a rigorous m...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
10.1109/ESSDERC.2007.4430901ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Resea...
Unstrained and strained triple-gate SOI devices under different strain techniques are studied experi...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
This paper presents both analytical models and Monte Carlo simulations concerning strain engineering...
his study combines direct measurements of strain, electrical mobility measurements, and a rigorous m...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of strain, electrical mobility measurements, and a rigorous ...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
This study combines direct measurements of channel strain, electrical mobility measurements and a ri...
10.1109/ESSDERC.2007.4430901ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Resea...
Unstrained and strained triple-gate SOI devices under different strain techniques are studied experi...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has al...
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