This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featuring relevant non-equilibrium transport effects. First, the physical mechanisms responsible of signal delay are reviewed. A novel technique to extract signal delays from self-consistent Monte Carlo device simulations is presented. These results are then used for a physically based comparison between compact quasi-static delay formulas and more accurate particle simulations carried out over a broad range of collector currents
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elemen...
The non-stationary transports effects in sub-100nm UTB MOSFET are investigated by using a 2-D self-c...
This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featur...
We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring re...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
A non-iterative formula is derived for calculating the delay time of digital BiCMOS circuits with th...
We present a systematic method for calculating the frequency-dependent collector signal delay time t...
Abstract—A regional signal-delay analysis is presented for field-effect transistors intended for ope...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
A new method is presented to evaluate the base and collector transit times, tB and 'te, in Heteroj...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
Advanced bipolar transistors operating in fast switching transient have been modeled taking into acc...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elemen...
The non-stationary transports effects in sub-100nm UTB MOSFET are investigated by using a 2-D self-c...
This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featur...
We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring re...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
A non-iterative formula is derived for calculating the delay time of digital BiCMOS circuits with th...
We present a systematic method for calculating the frequency-dependent collector signal delay time t...
Abstract—A regional signal-delay analysis is presented for field-effect transistors intended for ope...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
A new method is presented to evaluate the base and collector transit times, tB and 'te, in Heteroj...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
Advanced bipolar transistors operating in fast switching transient have been modeled taking into acc...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elemen...
The non-stationary transports effects in sub-100nm UTB MOSFET are investigated by using a 2-D self-c...