This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimensions. To this purpose test structures have been fabricated featuring butted contacts and guard rings with different values of critical distances. The devices have been experimentally characterized in the triggering and sustaining regime, and numerical simulations have been extensively used to interpret the experimental data. It is shown that great care should be taken in designing protection structures since larger areas do not always lead to enhanced latchup immunity
In this paper, we present results on the influence of the turning on of ESD protection devices on th...
The dependence of the latch-up susceptibility on layout parameters is studied on four stripe structu...
"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the t...
This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimen...
This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimen...
An experimental investigation on the interaction between different parasitic devices in CMOS ICs fro...
An experimental investigation on the interaction between different parasitic devices in CMOS ICs fro...
The influence of different layout parameters and of temperature on latch-up susceptibility has been ...
In this dissertation, an experimental study of latchup is conducted. A semi-physical analytical mode...
This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-...
Custom CMOS ICs are very attractive for automotive applications; in the tough automotive environment...
An analysis of three-dimensional (3-D) effects in CMOS latchup under dynamic conditions that expands...
In this paper, we present results on the influence of the turning on of ESD protection devices on th...
Experimental data obtained by testing CMOS commercial ICs for latchup by means of automatic test equ...
The effects of the following factors and their combinations on latchup behaviour of a Shallow Trench...
In this paper, we present results on the influence of the turning on of ESD protection devices on th...
The dependence of the latch-up susceptibility on layout parameters is studied on four stripe structu...
"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the t...
This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimen...
This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimen...
An experimental investigation on the interaction between different parasitic devices in CMOS ICs fro...
An experimental investigation on the interaction between different parasitic devices in CMOS ICs fro...
The influence of different layout parameters and of temperature on latch-up susceptibility has been ...
In this dissertation, an experimental study of latchup is conducted. A semi-physical analytical mode...
This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-...
Custom CMOS ICs are very attractive for automotive applications; in the tough automotive environment...
An analysis of three-dimensional (3-D) effects in CMOS latchup under dynamic conditions that expands...
In this paper, we present results on the influence of the turning on of ESD protection devices on th...
Experimental data obtained by testing CMOS commercial ICs for latchup by means of automatic test equ...
The effects of the following factors and their combinations on latchup behaviour of a Shallow Trench...
In this paper, we present results on the influence of the turning on of ESD protection devices on th...
The dependence of the latch-up susceptibility on layout parameters is studied on four stripe structu...
"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the t...