Hot-Electron induced Photon Energies in n-channel MOSFET\u2019s operating at 77 and 300 K
- LANZONI M
- MANFREDI M
- SELMI L
- SANGIORGI E
- CAPPELLETTI R
- RICCO B
Publication date
January 1989
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0741-3106 Citation count (estimate)
31Abstract
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission in n-channel MOSFETs is presented. The study significantly improves on previous work by considering energies up to 3.1 eV and different operating temperatures. It is shown that in contrast with previous results, the photon energy distribution is markedly non-Maxwellian, thus suggesting that the same is true for the energy distribution of the channel electrons
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