Add to ORKGBy electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers
Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-S...
International audienceIn this paper, we have investigated the quantized charging features revealed b...
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SR...
By electrical measurements we investigate the charge trapping and the charge transport in MOS capaci...
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are emb...
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich o...
In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide ...
International audienceThe transport phenomena in Metal-Oxide-Semiconductor (MOS) structures having s...
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SR...
International audienceIn this paper, we have studied the effect of annealing under slightly oxidizin...
In this brief, the electrical characteristics of MOS structures with specially designed distribution...
In this paper, we report a study on time-domain capacitance characterization of metal-oxide-semicond...
In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in ...
The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on ...
International audienceWe study the electrical properties of rare earth (RE) ions doped silicon rich ...
Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-S...
International audienceIn this paper, we have investigated the quantized charging features revealed b...
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SR...
By electrical measurements we investigate the charge trapping and the charge transport in MOS capaci...
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are emb...
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich o...
In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide ...
International audienceThe transport phenomena in Metal-Oxide-Semiconductor (MOS) structures having s...
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SR...
International audienceIn this paper, we have studied the effect of annealing under slightly oxidizin...
In this brief, the electrical characteristics of MOS structures with specially designed distribution...
In this paper, we report a study on time-domain capacitance characterization of metal-oxide-semicond...
In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in ...
The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on ...
International audienceWe study the electrical properties of rare earth (RE) ions doped silicon rich ...
Temperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-S...
International audienceIn this paper, we have investigated the quantized charging features revealed b...
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SR...