Add to ORKGIn this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE
In this work, we present a comprehensive experimental study of charge loss mechanisms in a dual-laye...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanoc...
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. S...
In this paper nanocrystals memories program curves are shown and their saturation points (steady sta...
In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpol...
Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which t...
This paper analyzes solutions to improve the program/ erase (P/E) window for nanocrystal (NC) memor...
This work presents a detailed study of data retention for nanocrystal Flash memories. Data retention...
[[abstract]]A semiconductor memory with nanocrystal embedded in the gate dielectric was proposed to ...
In this project, we have fabricated non-volatile memory (NVM) devices based on silicon nanocrystals...
textThis dissertation presents the theoretical analysis and experimental results of the nanocrystal ...
In this work we are addressing the threshold voltage instability observed in non volatile nanocrysta...
Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering an...
International audienceIn this paper we show for the 1 st time that Silicon nanocrystal (Si-ncs) memo...
In this work, we present a comprehensive experimental study of charge loss mechanisms in a dual-laye...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanoc...
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. S...
In this paper nanocrystals memories program curves are shown and their saturation points (steady sta...
In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpol...
Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which t...
This paper analyzes solutions to improve the program/ erase (P/E) window for nanocrystal (NC) memor...
This work presents a detailed study of data retention for nanocrystal Flash memories. Data retention...
[[abstract]]A semiconductor memory with nanocrystal embedded in the gate dielectric was proposed to ...
In this project, we have fabricated non-volatile memory (NVM) devices based on silicon nanocrystals...
textThis dissertation presents the theoretical analysis and experimental results of the nanocrystal ...
In this work we are addressing the threshold voltage instability observed in non volatile nanocrysta...
Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering an...
International audienceIn this paper we show for the 1 st time that Silicon nanocrystal (Si-ncs) memo...
In this work, we present a comprehensive experimental study of charge loss mechanisms in a dual-laye...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanoc...