Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band ben...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
The recombination dynamics of neutral donor bound excitons ((DX)-X-o: I-4, I-6/6a) and near band edg...
Verticallywell-aligned ZnO nanorods on Si substrates were prepared by atwo-step chemical bath deposi...
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in Z...
Due to the abundance of intrinsic defects in zinc oxide (ZnO) the material properties are often gove...
Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were depos...
Due to the abundance of intrinsic defects in zinc oxide (ZnO), the material properties are often gov...
An understanding of the morphology-dependent correlation between photoluminescence and photoconducti...
We investigated the morphology and properties of ZnO nanorods synthesized at 90 °C from the solution...
With particular focus on bulk heterojunction solar cells incorporating ZnO nanorods, we study how di...
Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized ...
In this study, the low temperature aqueous chemical growth (ACG) method was employed to synthesized ...
Zinc oxide (ZnO) is a wide bandgap semiconductor which has great potential for a variety of practica...
ZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods were studied by scannin...
The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorga...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
The recombination dynamics of neutral donor bound excitons ((DX)-X-o: I-4, I-6/6a) and near band edg...
Verticallywell-aligned ZnO nanorods on Si substrates were prepared by atwo-step chemical bath deposi...
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in Z...
Due to the abundance of intrinsic defects in zinc oxide (ZnO) the material properties are often gove...
Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were depos...
Due to the abundance of intrinsic defects in zinc oxide (ZnO), the material properties are often gov...
An understanding of the morphology-dependent correlation between photoluminescence and photoconducti...
We investigated the morphology and properties of ZnO nanorods synthesized at 90 °C from the solution...
With particular focus on bulk heterojunction solar cells incorporating ZnO nanorods, we study how di...
Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized ...
In this study, the low temperature aqueous chemical growth (ACG) method was employed to synthesized ...
Zinc oxide (ZnO) is a wide bandgap semiconductor which has great potential for a variety of practica...
ZnO nanorod arrays were fabricated using a hydrothermal method. The nanorods were studied by scannin...
The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorga...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
The recombination dynamics of neutral donor bound excitons ((DX)-X-o: I-4, I-6/6a) and near band edg...
Verticallywell-aligned ZnO nanorods on Si substrates were prepared by atwo-step chemical bath deposi...