Figure S3. Transfer characteristics of GFETs in 1 mM potassium phosphate buffer pH 7 before and after the addition of QueF-Y5Y and a nitrile. a) Single representative channel, b) aggregate measurements with thick line indicating the mean value and the shaded area ± 1 SD (preQ0 N=7, BnCN N=6). Arrows indicate direction of gate voltage change with time.</p
The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect tr...
Transconductance intensity plot data for figure S1 (device 6). Transconductance as a function of ch...
<p>Total resistance versus zone X<sub>I</sub>/X<sub>III</sub> length for two different gate voltages...
Figure S3. Transfer characteristics of GFETs in 1 mM potassium phosphate buffer pH 7 before and afte...
Figure 3. Response of enzyme-functionalized GFETs to two nitriles. Figure 3a. Normalized response o...
Figure S7. GFET response to BnCN on a surface coated with a 50:50 mix of R3RC/R3R peptides. Dotted v...
NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, ...
We examined the effects of device parameters on the transfer characteristics of triple-gate fin fiel...
<p>(A) is the overview of the building blocks of the model. Green blocks have been described in BB-S...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using T...
<p>Variation of transconductance (g<sub>m</sub>) (a), plot of the ratio of the drain current to the ...
A three-dimensional Gate-Wrap-Around Field-Effect Transistor (GWAFET). The GWAFET includes a substra...
(A) Amino acid sequences of i3 of mutant and chimeric constructs of MC9-YFP (black: M1R sequences, r...
The model of interconnected numerical device segments can give a prediction on the dynamic performan...
In the conventional treatment of the field effect transistor, the first step is the specification ...
The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect tr...
Transconductance intensity plot data for figure S1 (device 6). Transconductance as a function of ch...
<p>Total resistance versus zone X<sub>I</sub>/X<sub>III</sub> length for two different gate voltages...
Figure S3. Transfer characteristics of GFETs in 1 mM potassium phosphate buffer pH 7 before and afte...
Figure 3. Response of enzyme-functionalized GFETs to two nitriles. Figure 3a. Normalized response o...
Figure S7. GFET response to BnCN on a surface coated with a 50:50 mix of R3RC/R3R peptides. Dotted v...
NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, ...
We examined the effects of device parameters on the transfer characteristics of triple-gate fin fiel...
<p>(A) is the overview of the building blocks of the model. Green blocks have been described in BB-S...
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using T...
<p>Variation of transconductance (g<sub>m</sub>) (a), plot of the ratio of the drain current to the ...
A three-dimensional Gate-Wrap-Around Field-Effect Transistor (GWAFET). The GWAFET includes a substra...
(A) Amino acid sequences of i3 of mutant and chimeric constructs of MC9-YFP (black: M1R sequences, r...
The model of interconnected numerical device segments can give a prediction on the dynamic performan...
In the conventional treatment of the field effect transistor, the first step is the specification ...
The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect tr...
Transconductance intensity plot data for figure S1 (device 6). Transconductance as a function of ch...
<p>Total resistance versus zone X<sub>I</sub>/X<sub>III</sub> length for two different gate voltages...