Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition
- MACALUSO, Roberto
- MOSCA, Mauro
- LULLO, Giuseppe
- CARUSO, Fulvio
- CALI', Claudio
- DI FRANCO, Francesco
- SANTAMARIA, Monica
- DI QUARTO, Francesco
- Costanza, V
- D'Angelo, A
Publication date
January 2014
DOI Publisher
country:GB ISSN
0013-5194 Citation count (estimate)
12Abstract
The resistive switching behaviour observed in micro scale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio
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